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RF-MEMS capacitive switches with high reliability

United States Patent

September 3, 2013
View the Complete Patent at the US Patent & Trademark Office
A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.
Goldsmith; Charles L. (Plano, TX), Auciello; Orlando H. (Bolingbrook, IL), Carlisle; John A. (Romeoville, IL), Sampath; Suresh (Santa Barbara, CA), Sumant; Anirudha V. (Plainfield, IL), Carpick; Robert W. (Philadelphia, PA), Hwang; James (Bethlehem, PA), Mancini; Derrick C. (Riverside, IL), Gudeman; Chris (Santa Barbara, CA)
UChicago Argonne, LLC (Argonne, IL)
13/ 081,683
April 7, 2011
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The United States Government has rights in this invention pursuant to Contract No. DE-FG02-02ER46016 between the U.S. Department of Energy (DOE) and UChicago Argonne, LLC representing Argonne National Laboratory and pursuant to Contract No. MIPR06-W238 between the Defense Advanced Research Projects Agency (DARPA) and UChicago Argonne, LLC representing Argonne National Laboratory.