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Method of manufacture of atomically thin boron nitride

United States Patent

8,501,024
August 6, 2013
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
Zettl; Alexander K. (Kensington, CA)
The Regents of the University of California (Oakland, CA)
12/ 895,624
20110073562
September 30, 2010
STATEMENT OF GOVERNMENT SUPPORT This invention was made with government support under Contract No. DE-AC02-05CH 11231 awarded by the U.S. Department of Energy. The government has certain rights in this invention.