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Method of forming contacts for a back-contact solar cell

United States Patent

July 23, 2013
View the Complete Patent at the US Patent & Trademark Office
Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.
Manning; Jane (Woodside, CA)
SunPower Corporation (San Jose, CA)
12/ 959,199
December 2, 2010
The invention described herein was made with Governmental support under contract number DE-FC36-07GO17043 awarded by the United States Department of Energy. The Government may have certain rights in the invention.