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High efficiency III-nitride light-emitting diodes

United States Patent

May 28, 2013
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.
Crawford; Mary (Albuquerque, NM), Koleske; Daniel (Albuquerque, NM), Cho; Jaehee (Troy, NY), Zhu; Di (Troy, NY), Noemaun; Ahmed (Troy, NY), Schubert; Martin F. (Boise, ID), Schubert; E. Fred (Troy, NY)
Sandia Corporation (Albuquerque, NM)
13/ 050,673
March 17, 2011
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.