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Laser pumping of thyristors for fast high current rise-times

United States Patent

June 11, 2013
View the Complete Patent at the US Patent & Trademark Office
An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.
Glidden; Steven C. (Dryden, NY), Sanders; Howard D. (Batavia, IL)
Applied Pulsed Power, Inc. (Freeville, NY)
13/ 111,170
May 19, 2011
ACKNOWLEDGMENT OF GOVERNMENT SUPPORT This invention was made with Government support under Grant No. DE-FG-02-08ER85188, awarded by the Department of Energy. The government has certain rights in the invention.