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Methods of forming semiconductor devices and devices formed using such methods

United States Patent

8,445,388
May 21, 2013
View the Complete Patent at the US Patent & Trademark Office
Idaho National Laboratory - Visit the Technology Transfer and Commercialization Office Website
Nano Particles – Supercritical Fluid Process
Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.
Fox; Robert V. (Idaho Falls, ID), Rodriguez; Rene G. (Pocatello, ID), Pak; Joshua (Pocatello, ID)
Battelle Energy Alliance, LLC (Idaho Falls, ID)
13/ 099,043
20110204320
May 2, 2011
GOVERNMENT RIGHTS This invention was made with government support under Contract Number DE-AC07-05ID14517 awarded by the United States Department of Energy. The government has certain rights in the invention.