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Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

United States Patent

April 23, 2013
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.
Wang; George T. (Albuquerque, NM), Li; Qiming (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
12/ 388,103
February 18, 2009
The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.