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Method for solid state crystal growth

United States Patent

April 9, 2013
View the Complete Patent at the US Patent & Trademark Office
A novel method for high quality crystal growth of intermetallic clathrates is presented. The synthesis of high quality pure phase crystals has been complicated by the simultaneous formation of both clathrate type-I and clathrate type-II structures. It was found that selective, phase pure, single-crystal growth of type-I and type-II clathrates can be achieved by maintaining sufficient partial pressure of a chemical constituent during slow, controlled deprivation of the chemical constituent from the primary reactant. The chemical constituent is slowly removed from the primary reactant by the reaction of the chemical constituent vapor with a secondary reactant, spatially separated from the primary reactant, in a closed volume under uniaxial pressure and heat to form the single phase pure crystals.
Nolas; George S. (Tampa, FL), Beekman; Matthew K. (Eugene, OR)
University of South Florida (Tampa, FL)
12/ 859,534
August 19, 2010
GOVERNMENT SUPPORT This invention was made with government support under Grant No. DE-FG02-04ER46145 awarded by the U.S. Department of Energy. The government has certain rights in the invention.