A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH
This invention was made with government support under Grant Number DE-AC05-00OR22725 awarded by the Department of Energy and Grant Number FA9550-04-1-0452 awarded by the Air Force Office of Scientific Research. The Government has certain rights in the invention.
This invention was made, in part, with support from the Department of Energy, Grant No. RU416000, and from the Air Force Office of Scientific Research, Grant No. FA 9550-04-1-0452.