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Large-scale fabrication of vertically aligned ZnO nanowire arrays

United States Patent

February 5, 2013
View the Complete Patent at the US Patent & Trademark Office
In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.
Wang; Zhong L. (Marietta, GA), Das; Suman (Atlanta, GA), Xu; Sheng (Atlanta, GA), Yuan; Dajun (Atlanta, GA), Guo; Rui (Atlanta, GA), Wei; Yaguang (Atlanta, GA), Wu; Wenzhuo (Atlanta, GA)
Georgia Tech Research Corporation (Atlanta, GA)
13/ 091,855
April 21, 2011
STATEMENT OF GOVERNMENT INTEREST This invention was made with government support under contract No. DE-FG02-07ER46394, awarded by the Department of Energy and under contract No. W31P4Q-08-1-0009, awarded by the Department of the Army. The government has certain rights in the invention.