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Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films

United States Patent

January 8, 2013
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
Allerman; Andrew A. (Tijeras, NM), Crawford; Mary H. (Albuquerque, NM), Lee; Stephen R. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
12/ 471,690
May 26, 2009
The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.