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Megahertz organic/polymer diodes

United States Patent

8,330,149
December 11, 2012
View the Complete Patent at the US Patent & Trademark Office
Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.
Katz; Howard Edan (Owings Mills, MD), Sun; Jia (Baltimore, MD), Pal; Nath Bhola (Baltimore, MD)
The Johns Hopkins University (Baltimore, MD)
12/ 680,308
20100244001
September 25, 2008
STATEMENT REGARDING FEDERALLY-SPONSORED RESEARCH The present invention was supported by funding from the U.S. Air Force Office of Scientific Research, grant number FA9550-06-0076, the Department of Energy, contract number DE-FG02-07ER-46465, and a subcontract with Los Alamos National Laboratory. The U.S. Government may have certain rights to the present invention.