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Near-infrared photodetector with reduced dark current

United States Patent

October 30, 2012
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.
Klem; John F. (Albuquerque, NM), Kim; Jin K. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
12/ 827,587
June 30, 2010
GOVERNMENT RIGHTS This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.