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Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

United States Patent

8,258,482
September 4, 2012
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.
Nikolic; Rebecca J. (Oakland, CA), Conway; Adam M. (Dublin, CA), Nelson; Art J. (Trieste, IT), Payne; Stephen A. (Castro Valley, CA)
Lawrence Livermore National Security, LLC (Livermore, CA)
12/ 472,081
May 26, 2009
The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the United States Department of Energy and Lawrence Livermore National Security, LLC for the operation of Lawrence Livermore National Laboratory.