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Backside contact solar cell with formed polysilicon doped regions

United States Patent

August 14, 2012
View the Complete Patent at the US Patent & Trademark Office
A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.
Smith; David D. (Campbell, CA)
SunPower Corporation (San Jose, CA)
12/ 626,483
November 25, 2009
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The invention described herein was made with Governmental support under contract number DE-FC36-07GO17043 awarded by the United States Department of Energy. The Government may have certain rights in the invention.