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Method for synthesis of high quality graphene

United States Patent

March 27, 2012
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about C. or more, the carbon atoms self assemble themselves into graphene.
Lanzara; Alessandra (Piedmont, CA), Schmid; Andreas K. (Berkeley, CA), Yu; Xiaozhu (Berkeley, CA), Hwang; Choonkyu (Albany, CA), Kohl; Annemarie (Beneditkbeuern, DE), Jozwiak; Chris M. (Oakland, CA)
The Regents of the University of California (Oakland, CA)
13/ 043,329
March 8, 2011
STATEMENT OF GOVERNMENTAL SUPPORT The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 between the U.S. Department of Energy and the Regents of the University of California for the management and operation of the Lawrence Berkeley National Laboratory. The government has certain rights in this invention.