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Ultra-thin ohmic contacts for p-type nitride light emitting devices

United States Patent

January 3, 2012
View the Complete Patent at the US Patent & Trademark Office
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.
Raffetto; Mark (Raleigh, NC), Bharathan; Jayesh (Cary, NC), Haberern; Kevin (Cary, NC), Bergmann; Michael (Chapel Hill, NC), Emerson; David (Chapel Hill, NC), Ibbetson; James (Santa Barbara, CA), Li; Ting (Ventura, CA)
Cree, Inc. (Durham, NC)
11/ 191,111
July 27, 2005
STATEMENT OF GOVERNMENT SUPPORT This Invention was made with Government support under grant number DE-FC26-00NT40985 from the Department Of Energy. The Government has certain rights to this invention.