This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
STATEMENT OF GOVERNMENT RIGHTS
Research funding was provided for this invention by the U.S. Army under grant number W911NF-041-1-0389; U.S. Department of Energy under grant number DE-FG02-03ER46028; and the National Science Foundation under grant number 0079983. The United States government has certain rights in this invention.