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Propagation of misfit dislocations from buffer/Si interface into Si

United States Patent

August 30, 2011
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.
Liliental-Weber; Zuzanna (El Sobrante, CA), Maltez; Rogerio Luis (Porto Alegre, BR), Morkoc; Hadis (Richmond, VA), Xie; Jinqiao (Raleigh, VA)
The Regents of The University of California (Oakland, CA)
12/ 540,274
August 12, 2009
STATEMENT OF GOVERNMENTAL SUPPORT The invention described and claimed herein was made at least in part utilizing funds supplied by AFOSR GRANT No: AFOSRISSAO7NE001 through the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The Government has certain rights in this invention.