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Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

United States Patent

August 23, 2011
View the Complete Patent at the US Patent & Trademark Office
A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.
Yang; Peidong (El Cerrito, CA), Choi; Heonjin (Seoul, KR), Lee; Sangkwon (Daejeon, KR), He; Rongrui (Albany, CA), Zhang; Yanfeng (El Cerrito, CA), Kuykendal; Tevye (Berkeley, CA), Pauzauskie; Peter (Berkeley, CA)
The Regents of the University of California (Oakland, CA)
11/ 480,280
June 29, 2006
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with Government support under Grant No. DE-FG03-02ER46021, awarded by the Department of Energy, and under Grant No. DMR-0092086, awarded by the National Science Foundation. The Government has certain rights in this invention.