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Methods for fabricating thin film III-V compound solar cell

United States Patent

7,994,419
August 9, 2011
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
Pan; Noren (Wilmette, IL), Hillier; Glen (Spring Grove, IL), Vu; Duy Phach (San Jose, CA), Tatavarti; Rao (Des Plaines, IL), Youtsey; Christopher (Libertyville, IL), McCallum; David (West Chicago, IL), Martin; Genevieve (Chicago, IL)
MicroLink Devices, Inc. (Niles, IL)
12/ 167,583
20090044860
July 3, 2008
STATEMENT OF GOVERNMENT SUPPORT Some of the work described herein was sponsored by the National Renewable Energy Laboratory (NREL), Contract No. NAT-7-77015-05. The U.S. Government has certain rights in the invention.