Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.
STATEMENT REGARDING FEDERAL RIGHTS
This invention was made with government support under the Engineering Research Centers Program of the National Science Foundation under NSF award EEC-0310717, and under Contract No. DE-AC02-05CH11231 awarded to the Lawrence Berkeley National Laboratory by the U.S. Department of Energy. The government has certain rights in the invention.