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Nanometer-scale ablation using focused, coherent extreme ultraviolet/soft x-ray light

United States Patent

7,931,850
April 26, 2011
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.
Menoni; Carmen S. (Fort Collins, CO), Rocca; Jorge J. (Fort Collins, CO), Vaschenko; Georgiy (San Diego, CA), Bloom; Scott (Encinitas, CA), Anderson; Erik H. (El Cerrito, CA), Chao; Weilun (El Cerrito, CA), Hemberg; Oscar (Stockholm, SE)
Colorado State University Research Foundation (Fort Collins, CO), The Regents of University of California (Oakland, CA), JMAR Technologies, Inc. (San Diego, CA)
12/ 861,627
20110042353
August 23, 2010
STATEMENT REGARDING FEDERAL RIGHTS This invention was made with government support under the Engineering Research Centers Program of the National Science Foundation under NSF award EEC-0310717, and under Contract No. DE-AC02-05CH11231 awarded to the Lawrence Berkeley National Laboratory by the U.S. Department of Energy. The government has certain rights in the invention.