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Method for depositing high-quality microcrystalline semiconductor materials

United States Patent

March 8, 2011
View the Complete Patent at the US Patent & Trademark Office
A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.
Guha; Subhendu (Bloomfield Hills, MI), Yang; Chi C. (Troy, MI), Yan; Baojie (Rochester Hills, MI)
United Solar Ovonic LLC (Auburn Hills, MI)
10/ 765,435
January 27, 2004
GOVERNMENT INTEREST This work was supported by the United States Department of Energy under Contract No. ZDJ-2-30630-19.