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Optically initiated silicon carbide high voltage switch

United States Patent

February 22, 2011
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
Caporaso; George J. (Livermore, CA), Sampayan; Stephen E. (Manteca, CA), Sullivan; James S. (Livermore, CA), Sanders; David M. (Livermore, CA)
Lawrence Livermore National Security, LLC (Livermore, CA)
11/ 586,468
October 24, 2006
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.