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Method of doping organic semiconductors

United States Patent

7,821,000
October 26, 2010
View the Complete Patent at the US Patent & Trademark Office
An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.
Kloc; Christian Leo (Constance, DE), Ramirez; Arthur Penn (Summit, NJ), So; Woo-Young (New Providence, NJ)
Alcatel-Lucent USA Inc. (Murray Hill, NJ), The Trustees of Columbia University (New York, NY)
12/ 024,484
20090194762
February 1, 2008
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of contract No. DE-FG02-04ER46118 awarded by the Department of Energy.