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Direct cooled power electronics substrate

United States Patent

September 14, 2010
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.
Wiles; Randy H. (Powell, TN), Wereszczak; Andrew A. (Oak Ridge, TN), Ayers; Curtis W. (Kingston, TN), Lowe; Kirk T. (Knoxville, TN)
UT-Battelle, LLC (Oak Ridge, TN)
12/ 400,081
March 9, 2009
GOVERNMENT RIGHTS This invention was made with government support under Contract No. DE-AC05-00OR22725 awarded by the U.S. Department of Energy. The government has certain rights in the invention.