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Boron diffusion in silicon devices

United States Patent

September 7, 2010
View the Complete Patent at the US Patent & Trademark Office
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.
Rohatgi; Ajeet (Atlanta, GA), Kim; Dong Seop (Atlanta, GA), Nakayashiki; Kenta (Smyrna, GA), Rounsaville; Brian (Stockbridge, GA)
Georgia Tech Research Corporation (Atlanta, GA)
11/ 301,527
December 13, 2005
GOVERNMENT LICENSE RIGHTS The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of DE-FC36-00GO10600 awarded by the Department of Energy.