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Aligned crystalline semiconducting film on a glass substrate and method of making

United States Patent

August 24, 2010
View the Complete Patent at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
Aligned Crystalline Silicon (ACSi)
A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.
Findikoglu; Alp T. (Los Alamos, NM)
Los Alamos National Security, LLC (Los Alamos, NM)
11/ 581,978
October 17, 2006
STATEMENT REGARDING FEDERAL RIGHTS This invention was made with government support under Contract No. DE-AC 52-06 NA 25396, awarded by the U.S. Department of Energy. The government has certain rights in the invention.