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Ferroelectric tunneling element and memory applications which utilize the tunneling element

United States Patent

July 20, 2010
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.
Kalinin; Sergei V. (Knoxville, TN), Christen; Hans M. (Knoxville, TN), Baddorf; Arthur P. (Knoxville, TN), Meunier; Vincent (Knoxville, TN), Lee; Ho Nyung (Oak Ridge, TN)
UT-Battelle, LLC (Oak Ridge, TN)
11/ 368,550
March 6, 2006
This invention was made with Government support under Contract No. DE-AC05-00OR22725 awarded by the U.S. Department of Energy to UT-Battelle, LLC, and the Government has certain rights to the invention.