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Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

United States Patent

July 13, 2010
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.
Perkins; John (Boulder, CO), Van Hest; Marinus Franciscus Antonius Maria (Lakewood, CO), Ginley; David (Evergreen, CO), Taylor; Matthew (Golden, CO), Neuman; George A. (Holland, MI), Luten; Henry A. (Holland, MI), Forgette; Jeffrey A. (Hudsonville, MI), Anderson; John S. (Holland, MI)
Alliance for Sustainable Energy, LLC (Golden, CO)
11/ 738,344
April 20, 2007
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a Division of the Midwest Research Institute.