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Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

United States Patent

July 6, 2010
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.
Forrest; Stephen R. (Ann Arbor, MI), Wei; Guodan (Ann Arbor, MI)
The Trustees of Princeton University (Princeton, NJ)
11/ 598,006
November 13, 2006
UNITED STATES GOVERNMENT RIGHTS This invention was made with government support under Contract No. XAT-5-33636-03 awarded by the U.S. Department of Energy, National Renewable Energy Laboratory. The government has certain rights in the invention.