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Highly aligned vertical GaN nanowires using submonolayer metal catalysts

United States Patent

June 29, 2010
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.
Wang; George T. (Albuquerque, NM), Li; Qiming (Albuquerque, NM), Creighton; J. Randall (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
11/ 866,684
October 3, 2007
The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.