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Nanoeletromechanical switch and logic circuits formed therefrom

United States Patent

May 18, 2010
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.
Nordquist; Christopher D. (Albuquerque, NM), Czaplewski; David A. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
12/ 265,200
November 5, 2008
GOVERNMENT RIGHTS This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.