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Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

United States Patent

7,714,405
May 11, 2010
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
Layered CU-based electrode for high-dielectric constant oxide thin film-based devices (ANL-IN-03-013)
A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.
Auciello; Orlando (Bolingbrook, IL)
UChicago Argonne, LLC (Chicago, IL)
11/ 073,263
20060199740
March 3, 2005
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. W-31-109-ENG-38 between the U.S. Department of Energy and The University of Chicago representing Argonne National Laboratory.