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Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

United States Patent

7,670,933
March 2, 2010
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
Wang; George T. (Albuquerque, NM), Li; Qiming (Albuquerque, NM), Creighton; J. Randall (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
11/ 866,748
October 3, 2007
The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.