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Method for passivating crystal silicon surfaces

United States Patent

December 8, 2009
View the Complete Patent at the US Patent & Trademark Office
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Method For Passivating Crystal Silicon Surfaces
In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2.
Wang; Qi (Littleton, CO), Wang; Tihu (Littleton, CO), Page; Matthew R. (Littleton, CO), Yan; Yanfa (Littleton, CO)
Alliance For Sustainable Energy, LLC (Golden, CO)
11/ 574,167
August 26, 2004
CONTRACTURAL ORGIN OF THE INVENTION The United States Government has rights in this invention under Contract No. DE-AC3699GO10093 between the United States Department of Energy and the National Renewable Energy Laboratory, a division of the Midwest Research Institute.