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Doped carbon nanostructure field emitter arrays for infrared imaging

United States Patent

October 27, 2009
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are absorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.
Korsah; Kofi (Knoxville, TN), Baylor; Larry R (Farragut, TN), Caughman; John B (Oak Ridge, TN), Kisner; Roger A (Knoxville, TN), Rack; Philip D (Knoxville, TN), Ivanov; Ilia N (Knoxville, TN)
UT-Battelle, LLC (Oak Ridge, TN)
11/ 858,296
September 20, 2007
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH This invention was made with United States Government support under Contract No. DE-AC05-00OR22725 between the United States Department of Energy and U.T. Battelle, LLC. The United States Government has certain rights in this invention.