Skip to Content
Find More Like This
Return to Search

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

United States Patent

7,608,335
October 27, 2009
View the Complete Patent at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.
Findikoglu; Alp T. (Los Alamos, NM), Jia; Quanxi (Los Alamos, NM), Arendt; Paul N. (Los Alamos, NM), Matias; Vladimir (Santa Fe, NM), Choi; Woong (Los Alamos, NM)
Los Alamos National Security, LLC (Los Alamos, NM)
11/ 001,461
20060115964
November 30, 2004
This invention is the result of a contract with the United States Department of Energy (Contract No. W-7405-ENG-36). The government has certain rights to this invention.