The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
STATEMENT OF GOVERNMENT INTEREST
This invention was made with U.S. government support under grant number EAR-0135626 from the National Science Foundation and instrument number DE-FC03-03NA00144 from the U.S. Department of Energy. The U.S. government has certain rights in the invention.