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Metal-doped semiconductor nanoparticles and methods of synthesis thereof

United States Patent

September 8, 2009
View the Complete Patent at the US Patent & Trademark Office
The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.
Ren; Zhifeng (Newton, MA), Chen; Gang (Carlisle, MA), Poudel; Bed (West Newton, MA), Kumar; Shankar (Newton, MA), Wang; Wenzhong (Beijing, CN), Dresselhaus; Mildred (Arlington, MA)
Massachusetts Institute of Technology (Cambridge, MA), The Trustees of Boston College (Chestnut Hill, MA)
11/ 120,729
May 3, 2005
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The U.S. Government has rights in this invention pursuant to contract Nos. 5000486 and NAS3-03108 awarded by the National Aeronautics and Space Administration (NASA), grant No. NIRT 0304506 awarded by the National Science Foundation (NSF), and grant No. DE-FG02-00ER45805 awarded by the Department of Energy (DOE).