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Advanced insulated gate bipolar transistor gate drive

United States Patent

August 4, 2009
View the Complete Patent at the US Patent & Trademark Office
U.S. Department of Energy - Visit the Office of the Assistant General Counsel for Technology Transfer & Intellectual Property Website
A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.
Short; James Evans (Monongahela, PA), West; Shawn Michael (West Mifflin, PA), Fabean; Robert J. (Donora, PA)
The United States of America as represented by the United States Department of Energy (Washington, DC), N/A (
12/ 037,991
February 27, 2008
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of Contract No. DE-AC11-98PN38206 awarded by the Department of Energy.