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Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

United States Patent

August 4, 2009
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
Majumdar; Arun (Orinda, CA), Shakouri; Ali (Santa Cruz, CA), Sands; Timothy D. (Moraga, CA), Yang; Peidong (Berkeley, CA), Mao; Samuel S. (Berkeley, CA), Russo; Richard E. (Walnut Creek, CA), Feick; Henning (Kensington, CA), Weber; Eicke R. (Oakland, CA), Kind; Hannes (Schaffhausen, CH), Huang; Michael (Los Angeles, CA), Yan; Haoquan (Albany, CA), Wu; Yiying (Albany, CA), Fan; Rong (El Cerrito, CA)
The Regents of the University of California (Oakland, CA)
11/ 645,241
December 22, 2006
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with Government support under Contract No. DE-AC03-76SF00098, awarded by the Department of Energy, Grant No. DMR-0092086, awarded by the National Science Foundation, and Grant No. CTS-0103609, awarded by the National Science Foundation. The Government has certain rights in this invention.