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Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

United States Patent

July 7, 2009
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of C.-4 hours or less onto a variety of substrates such as MEMS devices.
Carlisle; John A. (Plainfield, IL), Gruen; Dieter M. (Downers Grove, IL), Auciello; Orlando (Bolingbrook, IL), Xiao; Xingcheng (Woodridge, IL)
UChicago Argonne, LLC (Chicago, IL)
10/ 892,736
July 15, 2004
The United States Government has rights in this invention pursuant to Contract No. W-31-109-ENG-38 between the U.S. Department of Energy (DOE) and The University of Chicago representing Argonne National Laboratory.