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GaTe semiconductor for radiation detection

United States Patent

June 23, 2009
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
Payne; Stephen A. (Castro Valley, CA), Burger; Arnold (Nashville, TN), Mandal; Krishna C. (Ashland, MA)
Lawrence Livermore National Security, LLC (Livermore, CA)
11/ 824,094
June 29, 2007
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.