Skip to Content
Find More Like This
Return to Search

Method and apparatus for aluminum nitride monocrystal boule growth

United States Patent

April 28, 2009
View the Complete Patent at the US Patent & Trademark Office
A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source material and a growing AlN crystal boule. This crucible has a thin wall thickness in at least that portion housing the growing AlN crystal boule. Other components include a susceptor, in case of an inductive heating, or a heater, in case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible in the range of C./cm and a furnace chamber capable of being operated from a vacuum (<0.1 torr) to a gas pressure of at least 4000 torr through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. The high temperatures contribute to a high boule growth rate and the thin wall thickness contributes to reduced imparted stress during boule removal.
Wang; Shaoping (Brookfield, CT)
Fairfield Crystal Technology, LLC (New Milford, CT)
11/ 789,590
April 25, 2007
U.S. GOVERNMENT RIGHTS The invention was made with U.S. Government support under SBIR Contract DE-FG02-05ER84232 awarded by the Department of Energy. The U.S. Government has certain rights in the invention.