Skip to Content
Find More Like This
Return to Search

Method for producing high carrier concentration p-Type transparent conducting oxides

United States Patent

April 14, 2009
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
Li; Xiaonan (Evergreen, CO), Yan; Yanfa (Littleton, CO), Coutts; Timothy J. (Golden, CO), Gessert; Timothy A. (Conifer, CO), Dehart; Clay M. (Westminster, CO)
Alliance For Sustainable Energy, LLC (Golden, CO)
10/ 553,245
April 2, 2002
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the Midwest Research Institute.