Skip to Content
Find More Like This
Return to Search

Method to control residual stress in a film structure and a system thereof

United States Patent

7,470,462
December 30, 2008
View the Complete Patent at the US Patent & Trademark Office
A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.
Parthum, Sr.; Michael J. (Rochester, NY)
Rochester Institute of Technology (Rochester, NY)
11/ 061,429
20050227054
February 18, 2005
This invention was made with Government support under Award No. DEFG02-02ER63410.A100 awarded by the Department of Energy (DOE). The Government may have certain rights in the invention.