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Method for improving Mg doping during group-III nitride MOCVD

United States Patent

November 11, 2008
View the Complete Patent at the US Patent & Trademark Office
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A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.
Creighton; J. Randall (Albuquerque, NM), Wang; George T. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
11/ 115,685
April 26, 2005
The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.