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Molten-salt-based growth of group III nitrides

United States Patent

October 14, 2008
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Electrochemical Solution Growth: Gallium Nitride Crystal Growth
A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.
Waldrip; Karen E. (Albuquerque, NM), Tsao; Jeffrey Y. (Albuquerque, NM), Kerley; Thomas M. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
11/ 102,357
April 8, 2005
The United States Government has rights in this invention pursuant to Department of Energy Contract No. DE-AC04-94AL85000 with Sandia Corporation.