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Optic probe for semiconductor characterization

United States Patent

September 2, 2008
View the Complete Patent at the US Patent & Trademark Office
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Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).
Sopori; Bhushan L. (Denver, CO), Hambarian; Artak (Yerevan, AM)
Midwest Research Institute (Kansas City, MO)
10/ 543,970
July 1, 2004
GOVERNMENT CONTRACT The United States Government has rights in this invention under Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a Division of the Midwest Research Institute.